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By Kroh M.
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Extra info for A Guide to the Sacz Ethnographic Park.
In particular, these noise measurements show that while intrinsic 1/f noise is absent in superlattice heterodiode, sidewall leakage current can become a source of strong frequency-dependent noise. This result underscores the importance of the development of reliable etching and sidewall passivation that can suppress the surface leakage current and prevent the onset of frequency-dependent noise. There are additional sources of temporal noise in SL FPA such as the read-out noise, as well as the spatial noise, resulting from variations of the pixel characteristics across FPA.
To deflect photogenerated electrons toward the Np junction for collection (similar to back surface field in solar cells). Although the InAsSb layer also appears to provide a hole barrier on the left, the broken-gap band alignment between the eB SL and InAsSb facilitates interband tunneling and interface recombination, which reduces hole accumulation in the absorber region. In addition, the eB SL presents a taller barrier against extra electron injection from the bottom contact. , 2009a, 2010). 18 shows the dark current–voltage characteristics of a CBIRD device compared to a homojunction device made with nominally the same absorber superlattice.
This explains the low electron effective mass in the growth direction. If we decrease the InAs quantum well width and push the C1 level into the GaSb band gap, as in the case of the (6,34) superlattice shown in Fig. 8B, the growth direction electron effective mass then becomes considerably larger. It is interesting that the in-plane electron effective mass in the (6,34) superlattice has also become nearly as large; this is mainly due to nonparabolicity in the bulk InAs conduction band. Returning to the (22,6)-InAs/GaSb superlattice, we note in Fig.